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Cutback measurements on arsenic triselenide thin films
Sample preparation
As2Se3 films were
deposited on Corning glass slides by thermal evaporation due to the
robust stoichiometry of bonding in this glass (Pressure < 2.10
-5 Torr, deposition rate ~ 100 Å/s). They were annealed for
2 hours at 180 oC under vacuum before measurements. The
thickness of each film was precisely measured by spectroscopic ellipsometry.
Measurement and experimental set up
Transmission measurements were performed
with a HeNe laser (633 nm P = 10 mW) and an Ar+ laser (514 nm, P = 40
mW) on 7 thin films: 201 nm, 362 nm, 591 nm, 959 nm, 973 nm, 1227 nm and
3076 nm thick films. Because of the photodarkening effect exhibited by
As 2Se 3, the transmission decreased with time until
reaching saturation. To take this effect into account, the transmitted
intensity was recorded versus time until relatively stable for four different
locations on each film. These four curves were averaged and the resulting
curve was fitted with a stretched exponential function to extract the characteristic
time and the transmission at t=0 and at saturation.
Results and analysis
The experimental data obtained for the average
transmission at t = 0s is shown on the graph below. The green dots correspond
to illumination with the Argon laser while the red dots correspond to illumination
with the HeNe laser. This data was fitted using the Transfer Matrix Method
1 to determine the refractive index of As2Se3
at 514 nm and 633 nm. The corresponding calculated data points are plotted
as black crosses on the same graph. The annealed refractive index values
obtained at 514 nm and 633 nm appear to be close to the one measured by
spectroscopic ellipsometry within an error of 1%.
These measurements also revealed that there
exists an optimal thickness ~200 nm for which the characteristic time
(i.e. time to saturation, defined as 6tau) is minimum. This is
the result of a trade-off between high losses for thick films where photodarkening
is slow and quenching of the photodarkening effect for small thicknesses
due to interface interactions.
References:
1. Ajoy K. Ghatak, K. T., M.R. Shenoy, "Numerical Analysis of Planar
Optical Waveguides Using Matrix Approach" Journal of Ligthwave Technology
LT-5, 660-667 (1987).
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