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Experimetal Facilities - SOPRA Broadband
Spectroscopic Ellipsometer
Sopra thin film characterization
station model GES5 UV-Vis-IR high precision spectroscopic ellipsometer capable
of performing accurate refractive index measurements from 210nm to 20microns.
Principle
Spectroscopic
ellipsometry (SE) is a non-contact,
non-destructive optical technique that enables the
determination of material refractive indices and layer
thicknesses by measuring the change in polarization of a
probing light beam upon reflection from a sample. When linearly
polarized light reflects from a surface, elliptically polarized
light is generated under certain conditions. The amount of
induced ellipticity depends on the surface properties (refractive
index, bulk or layered sample…). Ellipsometry technique measures
the phase and amplitude relationships between two orthogonal polarizations
(p and s waves) upon reflection. When p and s waves are reflected,
they experience a phase shift and an amplitude reduction (not
necessarily the same for both waves). The ellipsometric parameter
Delta is defined as d1 - d2 where d
1 and d2 denotes the induced phase shift difference
between p and s waves, respectively while the ellipsometric parameter
tan(Psi) is defined as the ratio of the complex amplitude of the total
reflection coefficient of the p and s waves ( |RP| / |R
S | ). Ellipsometry is said to be self-referencing because
measurements do not require any reference sample and are largely insensitive
to variations in the beam intensity and ambient environment, making
this technique highly accurate and reproducible.
Instrumentation
The
Sopra GES 5 spectroscopic ellipsometer
allows for variable-angle broadband spectroscopic ellipsometry.
It covers a spectral range from 230 nm to 20 microns using
three different detectors: a photomultiplier detector for
the UV/Visible spectrum from 230 nm to 880 nm, an InGaAs detector
in the Near Infra-Red spectrum from 880 nm to 2050 nm and a MCT-A
(HgCdTe) detector in the Infra-Red spectrum from 1.9 microns to
20 microns Photomultiplier detectors are known to require high-voltage
power supplies and to exhibit non-linearities and polarization
sensitivity. Semiconductor photodiodes have significant advantages
in that they are very linear over a broad range of intensity levels
and reasonable sensitive over a broad spectral range. A calibration
procedure is employed to measure the nonlinearity and polarization
sensitivity of the different detectors and to compensate for these
effects during measurements. The UV/Visible/NIR source is a Xenon
lamp whose maximum of intensity is located at 450 nm. Two attenuators
are available corresponding to an attenuation of 17 % and 7 %
respectively and the system can be set to automatically remove them
during a measurement when the intensity is very low in order to improve
the signal to noise ratio. Our configuration in the UV-Visible-NIR
spectrum is rotating polarizer - fixed analyzer ellipsometry.
When the polarizer rotates, the incident beam is linearly polarized
with a direction that rotates in time. After reflection on the
sample, the light is elliptically polarized with its axis rotating
in time. After the analyzer, the light is again linearly polarized
with a fixed direction and a time dependent amplitude. The advantage
of this technique is that the measurement is not affected by the polarization
sensitivity of the detector (fixed polarization) but it requires
a perfectly randomly polarized incident beam. Using a monochromator,
the intensity of the signal at each wavelength is measured in time
and Fourier transformed to determine the ellipsometric parameters.
The beam size is typically between 1 mm2 and 10 mm
2 depending on the aperture. To achieve small spot sizes,
the probing light can be first focused and then recollimated after reflection
on the sample, resulting in a spot size around 0.05 mm 2.
However, the use of focusing lenses can be the source of systematic
errors: the beam has no longer a unique angle of incidence but rather
hits the sample with a range of angles (this can be taken into account
in the regression analysis) and the focusing lenses can induce a change
of the beam polarization. This error usually translates in an overestimate
of the absorption and then of the k values. The minimal angle that can
be achieved is 8 degrees (12 degrees with focusing lenses).
Analysis
The
ellipsometric parameters are fitted
using the Levenberg-Marquardt regression method. Different
models are available to describe the dispersion relation of
the refractive index of the measured materials including the
Gaussian and Lorentz oscillator models, the Cauchy and Sellmeir
laws, the Kramers-Kronig relations, the Forouhi interband model,
the model dielectric function, the Drude model... Point to point
calculation (i.e. calculation of the n and k values from the data
at each wavelength for a single layer of known thickness) is also
possible. In addition, whenever the sample is bulk or can be treated as
such because of its strong absorption, the dispersion relation is simply
obtained by direct calculation of n and k at all wavelengths without any
assumption.
Reference
W. A. M. Harland G. Tompkins,
Spectroscopic Ellipsometry and Reflectometry - A user's guide ,
John Wiley & Sons, Inc., 1999.
Spectroscopic ellispometry
tutorial
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