Silicon nitride (Si3N4)

Sample preparation

Si3N4 films were deposited on Si wafers by dielectric chemical vapor deposition (DCVD). Sample provided by Rupa Das (rupadas@mit.edu).

Results


 
  
Wavelength (microns)
n
k
0.250
0.263
0.275
0.288
0.300
0.313
0.325
0.338
0.350
0.363
0.375
0.388
0.400
0.413
0.425
0.438
0.450
0.463
0.475
0.488
0.500
0.513
0.525
0.538
0.550
0.563
0.575
0.588
0.600
0.613
0.625
0.638
0.650
0.663
0.675
0.688
0.700
0.713
0.725
0.738
0.750
0.763
0.775
0.788
0.800
0.813
0.825
0.838
0.850
0.863
0.875
0.888
0.900
0.913
0.925
0.938
0.950
0.963
0.975
0.988
1.000
1.013
1.025
1.038
1.050
1.063
1.075
1.088
1.100
1.113
1.125
1.138
1.150
1.163
1.175
1.188
1.200
1.213
1.225
1.238
1.250
1.263
1.275
1.288
1.300
1.313
1.325
1.338
1.350
1.363
1.375
1.388
1.400
1.413
1.425
1.438
1.450
1.463
1.475
1.488
1.500
2.308
2.263
2.227
2.196
2.171
2.150
2.131
2.116
2.102
2.091
2.081
2.072
2.064
2.057
2.050
2.045
2.040
2.035
2.031
2.027
2.024
2.021
2.018
2.016
2.013
2.011
2.009
2.007
2.005
2.004
2.002
2.001
1.999
1.998
1.997
1.996
1.995
1.994
1.993
1.992
1.991
1.990
1.990
1.989
1.988
1.988
1.987
1.987
1.986
1.985
1.985
1.985
1.984
1.984
1.983
1.983
1.982
1.982
1.982
1.981
1.981
1.981
1.981
1.980
1.980
1.980
1.979
1.979
1.979
1.979
1.979
1.978
1.978
1.978
1.978
1.978
1.977
1.977
1.977
1.977
1.977
1.977
1.976
1.976
1.976
1.976
1.976
1.976
1.976
1.975
1.975
1.975
1.975
1.975
1.975
1.975
1.975
1.975
1.975
1.974
1.974
0.0442
0.0321
0.0235
0.0172
0.0126
0.00923
0.00675
0.00491
0.00355
0.00254
0.00180
0.00125
0.000851
0.000563
0.000361
0.000222
0.000131
0.000077
0.000051
0.000034
0.000023
0.000013
0.000008
0.000003
0.000001
0.000001
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0